(P12-11) From Fast Chargers to AI Data Centers: High-Voltage PowiGaN Delivers Clear Benefits from 200 W to >4 kW

While GaN enables much higher switching frequency compared to SiC and can provide a pathway to meeting the increasing power density and high efficiency required in AI data centers, electric vehicles and renewables, commercially available GaN HEMTs built on silicon substrate are very difficult to scale to voltages beyond 900V. Due to this, applications needing wide-bandgap power devices with 1200 V rating and beyond have been constrained to using SiC switches. GaN HEMTs built with Power Integrations’ proprietary GaN-on-sapphire technology offer the advantage of realizing a very high voltage rating in a practical device. We describe industry-first GaN power switches with rated voltages of 1250V and 1700V and illustrate at the system level their suitability to meet the requirements of these emerging applications.