This contribution explores a laser-based approach for localized OCF on SiC using diode-pumped solid-state lasers (DPSSL) with UV wavelengths. The study investigates the effect of varying laser fluence, pulse duration, and beam overlap on the formation of nickel silicide (NixSiy) contacts on 350 μm-thick 4H-SiC wafers with 70 nm NiAl metallization. Qualitative process trends are derived based on structural, electrical, and chemical performance indicators, with an emphasis on suppressing carbon-rich interfacial layers – a key factor in interface reliability under high thermal and electrical loads.
