Lecture
(PF13-8) 2nd generation CoolSiC MOSFETs – innovation enables performance and new portfolio options
- 13.11.2024 at 13:50 - 14:20
- Power Efficiency Stage (A5.351)
- Language: English
- Type: Keynote
Lecture description
Presented by Dr. Peter Friedrichs, Fellow SiC Innovation & Industrialization, Infineon Technologies
The 2nd generation of SiC MOSFETs by Infineon have been introduced recently and a broad roll out in several package platforms and voltage classes is ongoing. The presentation will give an overview about the portfolio and performance highlights of the CoolSiC™ G2. Special focus will be on the innovative die attach solution called .XT which mitigates the challenge of increasing thermal resistance connected to chip shrink. Furthermore, new portfolio additions like 400V SiC MOSFETs and double side cooled packages will be introduced.
Further lectures
- 10:00 - 10:40(PF13-1) Innovation in Power: Driving the Growth of Electrification and AI
- 10:40 - 11:20(PF13-2) Key to a sustainable and scalable battery value chain – the humble cell
- 11:20 - 11:50(PF13-3) Small, efficient and reliable - Innovations to unleash SiC potential in energy conversion systems
- 11:50 - 12:20(PF13-4) How CoolSiC™ MOSFET 750 V Generation 2 solves the challenges of OBC-designs and supports smart grid implementations
- 12:20 - 12:50(PF13-5) Powering AI from 48 V to core
- 13:20 - 13:50(PF13-7) Fastener DFM: Connecting Design to Automated Assembly
- 13:50 - 14:20(PF13-8) 2nd generation CoolSiC MOSFETs – innovation enables performance and new portfolio options
- 14:20 - 15:10(PF13-9) Panel Discussion: Strategic Focus in EV Adoption - Infrastructure vs. Powertrain Prioritization
- 15:10 - 15:40(PF13-10) AI Power Efficiency - Infineon's Latest Si and SiC Solutions at the Core of Server Power Supplies
- 15:40 - 16:10(PF13-11) How Infineon addresses the challenges of protection systems with wide SOA MOSFETs