Lecture
(PF12-5) Parallelling MOSFETs – Why it matters and how power MOSFETs enable the next step of system efficiency
- 12.11.2024 at 13:20 - 13:50
- Power Efficiency Stage (A5.351)
- Language: English
- Type: Keynote
Lecture description
Presented by Dr. Felix Krall, Product Application Engineer, Infineon
Shift from gasoline-powered systems to battery-powered is increasing also for high-power motor drive applications such as e-forklifts and LEVs. This higher power requirement can be fulfilled using higher battery voltages and/or paralleling multiple MOSFETs to handle higher currents. This presentation will go over MOSFET parameters that need to be considered for dynamic current sharing performance and how Infineon’s latest OptiMOS™ 6 technology resolves this challenge.
Further lectures
- 11:00 - 11:40(PF12-1) SiC and GaN power devices – key enabler for sustainable power electronics
- 11:40 - 12:20(PF12-2) WBG Semiconductors: investing in new material solutions for a carbon-neutral future
- 12:20 - 12:50(PF12-3) How to use GaN Switches in Switch Mode Power Supplies
- 12:50 - 13:20(PF12-4) CoolGaN™ innovations and solutions delivering next-level system performance
- 13:20 - 13:50(PF12-5) Parallelling MOSFETs – Why it matters and how power MOSFETs enable the next step of system efficiency
- 13:50 - 14:20(PF12-6) Driving efficiency and sustainable growth in industrial power semiconductors: the ST approach
- 14:20 - 15:10(PF12-7) Panel Discussion: SiC & GaN Technologies - Exploring Advancements, Addressing Challenges
- 15:10 - 15:40(PF12-8) 12 kW single-phase server power supply unit featuring 400 V SiC MOSFETs in a multi-level architecture
- 15:40 - 16:10(PF12-9) Preventing Failures by Power System Reliability Modeling
- 16:10 - 16:40(PF12-10) ICeGaN® as a smart high voltage platform for high power industrial and automotive applications