Lecture

(PF12-3) How to use GaN Switches in Switch Mode Power Supplies

  • 12.11.2024 at 12:20 - 12:50
  • Power Efficiency Stage (A5.351)
  • Language: English
  • Type: Keynote

Lecture description

Presented by Frederik Dostal, Power Management Expert, Analog Devices
 
This session will discuss important items to consider when using GaN switches as replacement for Silicon MOSFETs in switch mode power supplies. New specific switching controller ICs were recently released, which make it simple to drive wide band gap switches such as GaN. The GaN technology has many advantages over heritage silicon based MOSFETs. Power switches built with GaN can operate at very high temperatures. This allows for a high power density. Also, the material has a high voltage break down voltage which is useful in applications running at voltages of 100V and above. However, also below 100V, the power density and the capability of fast switching can give this technology advantages, such as higher power conversion efficiency, when designing many different power supplies.

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