Lecture
(PF12-10) ICeGaN® as a smart high voltage platform for high power industrial and automotive applications
- 12.11.2024 at 16:10 - 16:40
- Power Efficiency Stage (A5.351)
- Language: English
- Type: Keynote
Lecture description
Presented by Florin Udrea, Co-Founder and CTO, CGD (Cambridge GaN Devices)
Traditionally, GaN has been used for lower power consumer applications, while SiC dominated the medium to high power markets, such as industrial (e.g., motor drives) and automotive applications (e.g., traction inverters). SiC's superior scaling of on-state resistance at high voltages gives it an edge above 1.2 kV, but GaN is now competing with SiC at 650V for all power levels. ICeGaN®, featuring sensing and protection functions, surpasses discrete SiC in terms of robustness and ease of paralleling, offering notable advantages for 650V high-power applications. Additionally, with the rise of multi-level topologies for traction inverters, GaN may challenge SiC's 1.2 kV market. Ultimately, both technologies have a bright future, with overlap expected in high-power (10-500 kW) applications
Traditionally, GaN has been used for lower power consumer applications, while SiC dominated the medium to high power markets, such as industrial (e.g., motor drives) and automotive applications (e.g., traction inverters). SiC's superior scaling of on-state resistance at high voltages gives it an edge above 1.2 kV, but GaN is now competing with SiC at 650V for all power levels. ICeGaN®, featuring sensing and protection functions, surpasses discrete SiC in terms of robustness and ease of paralleling, offering notable advantages for 650V high-power applications. Additionally, with the rise of multi-level topologies for traction inverters, GaN may challenge SiC's 1.2 kV market. Ultimately, both technologies have a bright future, with overlap expected in high-power (10-500 kW) applications
Further lectures
- 11:00 - 11:40(PF12-1) SiC and GaN power devices – key enabler for sustainable power electronics
- 11:40 - 12:20(PF12-2) WBG Semiconductors: investing in new material solutions for a carbon-neutral future
- 12:20 - 12:50(PF12-3) How to use GaN Switches in Switch Mode Power Supplies
- 12:50 - 13:20(PF12-4) CoolGaN™ innovations and solutions delivering next-level system performance
- 13:20 - 13:50(PF12-5) Parallelling MOSFETs – Why it matters and how power MOSFETs enable the next step of system efficiency
- 13:50 - 14:20(PF12-6) Driving efficiency and sustainable growth in industrial power semiconductors: the ST approach
- 14:20 - 15:10(PF12-7) Panel Discussion: SiC & GaN Technologies - Exploring Advancements, Addressing Challenges
- 15:10 - 15:40(PF12-8) 12 kW single-phase server power supply unit featuring 400 V SiC MOSFETs in a multi-level architecture
- 15:40 - 16:10(PF12-9) Preventing Failures by Power System Reliability Modeling
- 16:10 - 16:40(PF12-10) ICeGaN® as a smart high voltage platform for high power industrial and automotive applications