(PF12-1) SiC and GaN power devices – key enabler for sustainable power electronics

This Keynote is presented by Dr. Peter Friedrichs and Dr. Gerald Deboy. Both are Fellows at Infineon Technologies.

Wide band gap power switches like GaN HEMTs and SiC transistors became key components for moder power conversion when efficiency and power density are in the focus of a new design. Furthermore, certain features of WBG components enable new solutions, e.g. bidirectional configurations in GaN or low loss circuit breaker switches based on SiC. The keynote will highlight most recent developments at component level as well as new application targets. Additional focus will be on the impact of the ecosystem of the power semiconductor itself, e.g. innovative packages solutions and smart driving.