The surge in demand for efficient and high-performance power electronics has led to the widespread adoption of wide bandgap (WBG) devices such as Gallium Nitride (GaN) and Silicon Carbide (SiC) transistors. However, accurate characterization of these devices, particularly in terms of drain current shunt measurements, remains a significant challenge. This presentation explores the best practices for conducting drain current shunt measurements on WBG devices.
It addresses key considerations such as the selection of appropriate measurement techniques, choosing the right probe, minimizing parasitic effects, and optimizing measurement accuracy and repeatability. Additionally, the presentation discusses common pitfalls and challenges encountered during drain current shunt measurements on WBG devices and provides strategies for overcoming them. By adhering to these best practices, researchers and design engineers can enhance the reliability and precision of drain current measurements, thereby advancing the development and deployment of WBG power electronics for various applications including automotive, renewable energy, and telecommunications.